A Novel Full Adder with High Speed Low Area
نویسندگان
چکیده
In most of the digital systems adder lies in the critical path that effects the overall speed of the system. So enhancing the performance of the 1-bit full adder cell is the main design aspect. The paper proposes the novel design of a 3T XOR gate combining complementary CMOS with pass transistor logic. The design has been compared with earlier proposed 4T and 6T XOR gates and a significant improvement in silicon area and power-delay product has been
منابع مشابه
Symmetrical, Low-Power, and High-Speed 1-Bit Full Adder Cells Using 32nm Carbon Nanotube Field-effect Transistors Technology (TECHNICAL NOTE)
Carbon nanotube field-effect transistors (CNFETs) are a promising candidate to replace conventional metal oxide field-effect transistors (MOSFETs) in the time to come. They have considerable characteristics such as low power consumption and high switching speed. Full adder cell is the main part of the most digital systems as it is building block of subtracter, multiplier, compressor, and other ...
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